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Deposition Of Aluminium Nitride Film By Ion Beam Enhanced Reactive Magnetron Sputtering

Published online by Cambridge University Press:  16 February 2011

R. F. Huang ,
L. S. Wen ,
H. Wang ,
J. Wu  and
R. J. Hong
R. F. Huang
Affiliation:
Institute of Metal Research, Academia Sinica, 110015 Shenyang, China
L. S. Wen
Affiliation:
Institute of Metal Research, Academia Sinica, 110015 Shenyang, China
H. Wang
Affiliation:
Institute of Metal Research, Academia Sinica, 110015 Shenyang, China
J. Wu
Affiliation:
Institute of Metal Research, Academia Sinica, 110015 Shenyang, China
R. J. Hong
Affiliation:
Institute of Metal Research, Academia Sinica, 110015 Shenyang, China
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Abstract

Aluminium nitride film has been synthesized at substrate temperatures lower than 100 °C by using ion beam enhanced reactive magnetron sputtering. The growth rate was much higher than that obtained by usual physical vapor deposition at low substrate temperatures. The stoichiometry of the film was controlled by varying the resultant current of the ion beam used and identified by X-ray diffraction analysis. The optical properties of the film were also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 289
Copyright
Copyright © Materials Research Society 1991

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References

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