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The Deposition, Fabrication and Characteristics of High Critical Temperature Devices

Published online by Cambridge University Press:  28 February 2011

G. W. Morris ,
M. G. Blamire ,
R. E. Somekh ,
E. J. Tomlinson  and
J. E. Evetts
G. W. Morris
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
M. G. Blamire
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
R. E. Somekh
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
E. J. Tomlinson
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
J. E. Evetts
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK.
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Abstract

In the first section of this paper the sputter deposition of thin films of YBa2Cu3O7−x is considered. In the second section low and high temperature heat treatments are discussed in the light of the thermodynamics of the material and in the third the development, fabrication and current-voltage (IV) characteristics of a variety of device structures are described, including the hysterctic characteristics of certain YBa2Cu3O7−x / YBa2Cu3O7−x devices that reveal Josephson supcrcurrcnt tunnelling.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 99: Symposium AA – High-Temperature Superconductors , 1987 , 197
Copyright
Copyright © Materials Research Society 1988

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References

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