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Dependence of Buried CoSi2 Resistivity on ION Implantation and Annealing Conditions1

Published online by Cambridge University Press:  28 February 2011

Fereydoon Namavar ,
N. M. Kalkhoran ,
J. M. Manke ,
L. Luo  and
J. T. McGinn
Fereydoon Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
N. M. Kalkhoran
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
J. M. Manke
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
L. Luo
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM
J. T. McGinn
Affiliation:
David Sarnoff Research Center, Princeton, NJ
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Abstract

We have investigated the dependence of electrical and material properties of buried CoSi2 layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi2 layers depend strongly on the implantation temperature. CoSi2 layers with the lowest resistivity and best crystalline quality (Xmin as low as 3.6%) were obtained from samples implanted at 300°C-400°C. Implantation at higher temperatures (e.g., 580°C) produced cobalt disilicide layers with significantly higher electrical resistivity and a Xmin of about 10.7%.

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References

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