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Dependence of A-Si:H Tfts Performances on Deposition and Process Parameters

Published online by Cambridge University Press:  28 February 2011

E. Chartier ,
N. Szydlo ,
F. Boulitrop ,
N. Proust  and
J. MagariÑO
E. Chartier
Affiliation:
Laboratoire Central de recherches, Thomson-CSF., BP 10, 91401 Orsay Cedex, France.
N. Szydlo
Affiliation:
Laboratoire Central de recherches, Thomson-CSF., BP 10, 91401 Orsay Cedex, France.
F. Boulitrop
Affiliation:
Laboratoire Central de recherches, Thomson-CSF., BP 10, 91401 Orsay Cedex, France.
N. Proust
Affiliation:
Laboratoire Central de recherches, Thomson-CSF., BP 10, 91401 Orsay Cedex, France.
J. MagariÑO
Affiliation:
Laboratoire Central de recherches, Thomson-CSF., BP 10, 91401 Orsay Cedex, France.
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Abstract

Amorphous silicon TFTs have been realized using several plasma-CVD systems which differ in the conception of the reactor: hot or cold walls, and from the frequency used: 400 kHz and 13.56 MHz. Silicon nitride has been used as insulator. Inverted and direct staggered structures with different channel dimensions (0.5 ≤ W/L ≥ 20) are compared. High performance TFTs with mobility from 0.5 to 0.7 cm2V−1s−1 for inverted and from 0.1 to 0.4 cm2V−1s−l for direct staggered TFTs have been optimized by a full study of the insulator semiconductor and source/drain contact properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 453
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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