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Dependence of a-Si:H Degradation on i-Layer Thickness and Photon Energy

Published online by Cambridge University Press:  01 January 1993

H. Paes ,
C. Achete  and
W. Losch
H. Paes
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, P. O. Box: 68.505 Rio de Janeiro -RJ - Brazil - 21.945-970 - fax: (005521)290.6626
C. Achete
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, P. O. Box: 68.505 Rio de Janeiro -RJ - Brazil - 21.945-970 - fax: (005521)290.6626
W. Losch
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, P. O. Box: 68.505 Rio de Janeiro -RJ - Brazil - 21.945-970 - fax: (005521)290.6626
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Abstract

Metastable light-induced changes in hydrogenated amoiphous silicon (a-Si:H) have been monitored by stationary single photocarrier charge collection in p-i-n diodes under reverse bias. The influence of the following parameters has been systematically investigated: i-layer thickness, applied voltage and illumination time and energy. A strong dependence of cell degradation on i-layer thickness is observed. In the case of degraded diodes superlinear current vs. voltage (Iph αVm) in the low voltage regime were observed. These results can be related to space-charge-limited photocurrents. The results from variation of photon energy and single and/or double carrier injection indicate that recombination rather than single-carrier trapping plays a key role in metastable defect creation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 595
Copyright
Copyright © Materials Research Society 1993

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References

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