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Densification of Sio Gel Films by Synchrotron Radiation and its Dependence on Photon Energy

Published online by Cambridge University Press:  15 February 2011

Hiroaki Imai ,
Koichi Awazu ,
Masaru Yasumori ,
Hiroshi Hirashima  and
Hideo Onuki
Hiroaki Imai
Affiliation:
Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223, Japan
Koichi Awazu
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Masaru Yasumori
Affiliation:
Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223, Japan
Hiroshi Hirashima
Affiliation:
Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223, Japan
Hideo Onuki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
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Abstract

The interaction of synchrotron radiation (SR) emitted from a polarizing undulator with SiO2 gel films was investigated by ellipsometry and infrared spectroscopy. The photon energy in SR was varied in the range of 6.4−17.8 eV using an Onuki-type undulator in order to study the energy dependence of the interaction. We found that an increase of refractive index, a decrease of thickness of the films and a loss of OH groups were induced by photons with energies above ˜9 eV although any changes were not observed with photons below ˜7 eV. These results suggest that SiO2 gel films are densified through electronic processes stimulated by the energetic photons.

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