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Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

Published online by Cambridge University Press:  01 February 2011

Takaaki Amada ,
Nobuhide Maeda  and
Kentaro Shibahara
Takaaki Amada
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2, Kagamiyama, Higashihiroshima, Hiroshima, 739-8527 Japan.
Nobuhide Maeda
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2, Kagamiyama, Higashihiroshima, Hiroshima, 739-8527 Japan.
Kentaro Shibahara
Affiliation:
Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2, Kagamiyama, Higashihiroshima, Hiroshima, 739-8527 Japan.
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Abstract

An Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B7.5
Copyright
Copyright © Materials Research Society 2002

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