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Defect Formation and Hydrogen Trapping in H+ Implanted FZ Silicon

Published online by Cambridge University Press:  21 February 2011

W. J. Choyke ,
J. A. Spitznagel ,
N. J. Doyle ,
S. Wood  and
R. B. Irwin
W. J. Choyke
Affiliation:
Westinghouse R&D Center, 1310 Beulah Rd., Pittsburgh, PA 15235 and University of Pittsburgh, Pittsburgh, PA 15260
J. A. Spitznagel
Affiliation:
Westinghouse R&D Center, 1310 Beulah Rd., Pittsburgh, PA 15235 and University of Pittsburgh, Pittsburgh, PA 15260
N. J. Doyle
Affiliation:
Westinghouse R&D Center
S. Wood
Affiliation:
Westinghouse R&D Center
R. B. Irwin
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260, (Present Address: AT&T Bell Laboratories, Allentown, PA)
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Abstract

The formation and annealing of buried damage layers in hydrogen implanted N-type float zone <111> silicon has been studied by Rutherford Backscattering/ion channeling and cross-section transmission electron microscopy. Implantation with 50 keV or 75 keV H+ ions was conducted at temperatures of 95K, 300K and 800K at fluences of 2×1017 H+/cm2, 8×1017 H+/cm2 and 1×1018 H+/cm2. Post implantation annealing was conducted at temperatures up to 800K. The results show a temperature dependent transition from a highly hydrogen doped amorphous zone bounded by strongly diffracting (TEM) 2–5 nm diameter defects for implantation at 95K to a crystalline microstructure containing small dislocation loops and ∼40% of the implanted hydrogen for implantation at 300K. Defect production and annealing and hydrogen trapping in the damage zone are shown to depend on the relative implantation and post implantation annealing temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 187
Copyright
Copyright © Materials Research Society 1985

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References

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