Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-09T21:45:50.871Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep-Levels Associated with Implanted Titanium in Silicon

Published online by Cambridge University Press:  28 February 2011

Craig M. Ransom  and
S.S. Iyer
Craig M. Ransom
Affiliation:
IBM Corporation, T. J. Watson Research Center Yorktown Heights, New York 10598
S.S. Iyer
Affiliation:
IBM Corporation, T. J. Watson Research Center Yorktown Heights, New York 10598
Get access

Abstract

Titanium was ion implanted at 180 KeV into p-type silicon to form a buried TiSi2 layer. DLTS measurements of n+p junctions have shown two minority carrier traps at Ec − Et = 0.24 and 0.51 eV. Also, a single majority trap at Ev + Et = 0.41 eV was observed. The concentrations of these levels were calculated to be approximately 1013 cm−3. DLTS measurements of low-fluence 50 KeV Ti implantations using Schottky diodes showed four levels dependent on silcon type.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 197
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ting, C.Y., lyer, S.S., Osburn, C.M., Hu, G.J. and Scheighart, A.M., “VLSI Science and Technology” edited by Dell'Oca, C.J. and Bullis, W.M., Electrochem. Soc., 224 (1982).Google Scholar
2. Lau, C.K., Lee, Y.C., Scott, D.B., Bridges, J.M., Perma, J.M. and Davies, R.D., IEDM Tech. Dig., 714 (1982).Google Scholar
3. Fahrner, W. and Goetzberger, A., Appl. Phys. Let., 21, 329 (1972).Google Scholar
4. Schulz, M., Appl. Phys., 4, 225 (1974).Google Scholar
5. Chen, J.W., Milnes, A.G. and Rohatgi, A, Solid-State Electronics, 22, 801 (1979).CrossRefGoogle Scholar
6. Salai, A.M.1,d and Cheng, L.J., J. Electrochem. Soc., 127, 1164 (1980).Google Scholar
7. Graff, K. and Pieper, H., in “Semiconductor Silicon”, edited by Huff, H.R., Kriegler, R.J. and Takeishi, Y., Electrochem. Soc., 331 (1981).Google Scholar
8. Weber, E., Appl. Phys. A30, 1 (1983).Google Scholar
9. Wezep, D.A. van and Ammerlaan, A.J., J. Electronic Materials, (1984?).Google Scholar
10. Morante, J.R., Carceller, J.E., Cartujo, P. and Barbolla, J., Solid-State Electronics 26, 1 (1983).Google Scholar
11. Butz, R., Rubloff, G.W., Tan, T.Y. and Ho, P.S., Phys. Rev.B, 30, 5421 (1984).Google Scholar
12. Iyer, S.S., Ting, C.Y. and Fryer, P.M., J. Electrochem. Soc., 132, 2240 (1985).Google Scholar
13. Iyer, S.S. (to be published).Google Scholar
14. Ting, C.Y., d'Heurle, F.M., Iyer, S.S. and Fryer, P.M., Electrochem. Soc. Extended Abstracts 85–1, 387 (1985).Google Scholar