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Deep Level Investigation in Si-GaAs by Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

Zhao Zhouying ,
Wu Fengmai  and
Li Ningsheng
Zhao Zhouying
Affiliation:
Department of Materials Research, Nanjing Electronic Devices Institute, #524 East Zhongshan Road, Nanjing, 210016, China
Wu Fengmai
Affiliation:
Department of Physics, Nanjing University, #24 Hankou Road, Nanjing, 210093, China
Li Ningsheng
Affiliation:
Department of Physics, Nanjing University, #24 Hankou Road, Nanjing, 210093, China
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Abstract

Deep levels in undoped LEC semi-insulating (SI) GaAs have been investigated by rapid thermal annealing (RTA). The GaAs wafers were annealed for 10 sec in N2 atmosphere at temperatures ranging from 500 to 800 °C. Using photo-induced current transient spectroscopy (PITS) and Hall measurement, we have investigated the behavior of various deep levels as a function of RTA temperature and the phenomenon of thermal conversion. The change and even conversion in resistivity is related not only to decrease of the EL2 and EL6 defects, but also to shallow acceptor caused by arsenic-escaping in the surface of the wafer. Choosing proper RTA temperaturte will improve the electrical properties of SI-GaAs after RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 407
Copyright
Copyright © Materials Research Society 1997

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References

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