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Deep Level Characterization of LP-MOCVD Grown Al0.48In0.52As

Published online by Cambridge University Press:  22 February 2011

F. Ducroquet ,
G. Guillot ,
K. Hong ,
C.H. Hong ,
D. Pavlidis  and
M. Gauneau
F. Ducroquet
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358), INSA-LYON, bât 502, 69621 Villeurbanne cedex, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358), INSA-LYON, bât 502, 69621 Villeurbanne cedex, France
K. Hong
Affiliation:
Solid-State Electronics Laboratory, The University of Michigan, Beal avenue, Ann Arbor, MI 48109-2122, USA
C.H. Hong
Affiliation:
Solid-State Electronics Laboratory, The University of Michigan, Beal avenue, Ann Arbor, MI 48109-2122, USA
D. Pavlidis
Affiliation:
Solid-State Electronics Laboratory, The University of Michigan, Beal avenue, Ann Arbor, MI 48109-2122, USA
M. Gauneau
Affiliation:
CNET - France-Telecom, 22301 Lannion cedex, France
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Abstract

Deep levels in unintentionally doped A10. 48In0.52As layers epitaxially grown on InP substrates by low-pressure MOCVD have been investigated as a function of growth temperature (Tg ranging from 570 to 690°C). Two different origins for the residual carrier concentration are deduced depending on Tg: i) low growth temperatures favor the creation of a deep donor located at Ec-(0.13±0.04)eV; ii) At higher Tg, a preferential incorporation of a shallow donor occurs, which can be attributed to silicon by SIMS measurements. The oxygen contamination deduced by SIMS and the electrical characteristics of the AlInAs layers do not appear to be correlated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 235
Copyright
Copyright © Materials Research Society 1994

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