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Deep Diffusions and Soi Layers Produced by Rapid Thermal Processing for Smart Power Applications

Published online by Cambridge University Press:  10 February 2011

J-M. Dilhac ,
L. Cornibert  and
C. Ganibal
J-M. Dilhac
Affiliation:
LAAS-CNRS, 7 avenue du colonel Roche, 31077 Toulouse CEDEX4, FRANCE, dilhac@laas.fr
L. Cornibert
Affiliation:
LAAS-CNRS, 7 avenue du colonel Roche, 31077 Toulouse CEDEX4, FRANCE, dilhac@laas.fr
C. Ganibal
Affiliation:
LAAS-CNRS, 7 avenue du colonel Roche, 31077 Toulouse CEDEX4, FRANCE, dilhac@laas.fr
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Abstract

Power devices often contain very deep boron diffusions extending through the thickness of the wafer to create junction isolation. In this paper we first report our investigations to replace the standard solid-state deep diffusion, with Temperature-Gradient Zone Melting (TGZM). During TGZM, a molten silicon/aluminium solution moves through a Si wafer in minutes, leaving a highly Al doped trail behind it. The liquid phase diffusion is driven by the vertical thermal gradient created in the wafer by a properly designed RTP.

On the other hand, for the purpose of high voltage (> 400V) smart power applications, substrates with localised and thick SOI layers are needed. We also present a method for recrystallization of thick poly silicon films by Lateral Epitaxial Growth over Oxide (LEGO), using a similarly designed RTP.

The two processes, that is LEGO and TGZM, use a Rapid Thermal Processor and are compatible. The RTP is specially designed to create a thermal gradient perpendicular to the wafer surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 319
Copyright
Copyright © Materials Research Society 1997

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References

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