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Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells

Published online by Cambridge University Press:  25 February 2011

J.P. Bergman ,
P.O. Holtz ,
B. Monemar ,
M. Sundaram ,
J.L Merz  and
A.C. Gossard
J.P. Bergman
Affiliation:
Department of Physics and Measurement Technology Linköping University, S-581 83 Linköping, SWEDEN
P.O. Holtz
Affiliation:
Department of Physics and Measurement Technology Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology Linköping University, S-581 83 Linköping, SWEDEN
M. Sundaram
Affiliation:
Department of Electrical and Computer Engineering, and Materials Department University of California, Santa Barbara, California 93106, USA.
J.L Merz
Affiliation:
Department of Electrical and Computer Engineering, and Materials Department University of California, Santa Barbara, California 93106, USA.
A.C. Gossard
Affiliation:
Department of Electrical and Computer Engineering, and Materials Department University of California, Santa Barbara, California 93106, USA.
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Abstract

In this study we present photoluminescence decay measurements of free exciton (FE) and bound exciton (BE) recombination in doped GaAs/AIGaAs quantum wells (QW). It is found that the FE decay time is reduced in the doped QW’s compared to similar undoped samples. The low temperature decay time of the BE is slightly longer than for the FE, with BE decay times from 300 to 600 ps for well widths of 50 to 150 Å, respectively. It is also found that the observed decay of the BE is strongly influenced by the decay time of the FE. This is especially observed in the similarity of the temperature dependence for the FE and BE decay time.

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