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The CVD Diamond Nucleation Mechanism on Si Overlaid with sp2 Carbon

Published online by Cambridge University Press:  25 February 2011

Pehr E. Pehrsson ,
John Glesener  and
Arthur A. Morrish
Pehr E. Pehrsson
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, D.C. 20375–5000
John Glesener
Affiliation:
ONT Post-Doctoral Fellow, Naval Research Laboratory
Arthur A. Morrish
Affiliation:
Optical Sciences Division, Naval Research Laboratory
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Abstract

Rudder et al. [1] observed heavy (>109 cm-2) diamond nucleation on unscratched Si wafers overlaid with carbon fibers during CVD growth. We demonstrate that the nucleation occurs on the edges of etch pits and carbon-rich particles resulting from reaction between the fibers and the substrate. Both the etch pits and the particles satisfy what we consider to be two necessary conditions for ‘spontaneous’ nucleation; a carbon-saturated surface and high energy sites (unsatisfied valencies) at edges and steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 57
Copyright
Copyright © Materials Research Society 1992

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