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Current Status of SiC Power Switching Devices: Diodes & GTOs

Published online by Cambridge University Press:  10 February 2011

S. Seshadri ,
A. K. Agarwall ,
W. B. Hall ,
S. S. Mani ,
M. F. MacMillan ,
R. Rodrigues ,
T. Hanson ,
S. Khatri  and
P. A. Sanger
S. Seshadri
Affiliation:
ESSS, STC Northrop Grumman Corporation, 1350 Beulah Road, Pittsburgh, PA 15235–5098, sseshadr@ aeslcad.essd.pa.northgrum.com
A. K. Agarwall
Affiliation:
Currently at Cree Research, Inc. 4600 Silicon Drive, Durham, NC 27703
W. B. Hall
Affiliation:
Northrop Grumman Corporation, Baltimore, MD
S. S. Mani
Affiliation:
Currently at Sandia National Laboratory, Albuquerque, NM
M. F. MacMillan
Affiliation:
ESSS, STC Northrop Grumman Corporation, 1350 Beulah Road, Pittsburgh, PA 15235–5098, sseshadr@ aeslcad.essd.pa.northgrum.com
R. Rodrigues
Affiliation:
Silicon Power Corporation, Malvern, PA
T. Hanson
Affiliation:
Silicon Power Corporation, Malvern, PA
S. Khatri
Affiliation:
Silicon Power Corporation, Malvern, PA
P. A. Sanger
Affiliation:
ESSS, STC Northrop Grumman Corporation, 1350 Beulah Road, Pittsburgh, PA 15235–5098, sseshadr@ aeslcad.essd.pa.northgrum.com
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Abstract

The progress that has been made in SiC diodes and GTOs is reviewed. A 100 A/1000 V SiC pi- n diode package, the highest current rating reported for any SiC device, a 69 A conduction/ 11 A turn-off of a SiC GTO and MTOTM, as well as the first all-SiC, 3 phase Pulse Width Modulated (PWM) inverter are reported, herein, for the first time. The inverter achieves voltage controlled turn off with a high temperature capable, hybrid SiC JFET. Material and process technology issues that will need to be addressed before device commercialization can be realized are discussed.

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References

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