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Crystallinity and Optoelectronic Properties of μc-SiC:H

Published online by Cambridge University Press:  28 February 2011

F. Demichelis ,
G. Crovini ,
c. Osenga ,
C. F. Pirri ,
E. Tresso  and
L. Boarino
F. Demichelis
Affiliation:
Dipartimento di Fisica del Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)
G. Crovini
Affiliation:
Dipartimento di Fisica del Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)
c. Osenga
Affiliation:
Dipartimento di Fisica del Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)
C. F. Pirri
Affiliation:
Dipartimento di Fisica del Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)
E. Tresso
Affiliation:
Dipartimento di Fisica del Politecnico, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)
L. Boarino
Affiliation:
IEN Galileo Ferraris, Str. delle Cacce 91,10135 Torino (Italy)
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Abstract

Samples of μc-Si1-xCx:H with different degree of crystallinity and different carbon content were deposited by Plasma Enhanced Chemical Vapor Deposition and characterized by means of optical, electrical and structural measurements. The correlation between the degree of crystallinity and the mechanism of conductivity and optical transitions in both amorphous and crystalline phases and at the crystalline-amorphous interfaces is reported and discussed in terms of a band structure model.

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References

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