Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-04T16:33:10.827Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation

Published online by Cambridge University Press:  28 February 2011

K. Nauka ,
Jun Amano ,
M.P. Scott ,
E.R. Weber ,
J.E. Turner  and
R. Tsai
K. Nauka
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
Jun Amano
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
M.P. Scott
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
E.R. Weber
Affiliation:
UC Berkeley, Berkeley, CA 94720
J.E. Turner
Affiliation:
Hewlett Packard Laboratories, Palo Alto, CA 94304
R. Tsai
Affiliation:
Hewlett Packard IC Division, Ft.Collins, CO 80525
Get access

Abstract

Deep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 319
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chen, D.C., Wong, S.S., Voore, P. Vande, Merchant, P., Cass, T., Amano, J., Chen, K.Y., IEDM Tech.Digest, 118 (1984)Google Scholar
2. Amano, J., Nauka, K., Scott, M.P., Turner, J.E., Tsai, R., submitted to Appl.Phys.Lett.Google Scholar
3. Chen, J.W., Milnes, A.G., Rohatgi, A., Sol.St.Electron. 22, 801 (1979)Google Scholar
4. Rohatgi, A., Davis, J.R., Hopkins, R.H., McMullin, P.G., Sol.St.Electron. 26, 1039 (1983)CrossRefGoogle Scholar
5. Grove, A.S “Physics of Semiconductor Devices”, J.Wiley, NY 1967, ch.6Google Scholar
6. Nauka, K., Amano, J., Scott, M.P., Turner, J.E., Weber, E.R., Tsai, R., submitted to Appl.Phys.Lett.Google Scholar
7. Murarka, S.P. “Silicides for VLSI Applications”, Academic Press, NY 1983 Google Scholar
8. Andrew, J.M., Lepsrlter, M.P., Sol.St.Electron. 13, 1011 (1980)CrossRefGoogle Scholar