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Correlation Between Microstructure and Optoelectronic Properties of a-SiGe:H

Published online by Cambridge University Press:  25 February 2011

H. C. Weller  and
G. H. Bauer
H. C. Weller
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D 7000 Stuttgart 80, F.R.G.
G. H. Bauer
Affiliation:
Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D 7000 Stuttgart 80, F.R.G.
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Abstract

A dense network structure with low defect and void densities in a-SiGe:H alloys are realized by remote deposition conditions (triode reactor configuration, H2-dilution of SiH4+GeH4 gas mixture). The material properties are characterized by optical transmission, photothermal deflection spectroscopy (PDS), scanning electron microscopy (SEM), and space charge limited currents (SCLC). A high refractive index n∞. (λ->∞) and a fine surface structure in SEM images indicate an optical dense network, moreover the defect density determined by SCLC is reduced in comparison to films deposited in a conventional diode reactor. The substrate temperature TS, one of the key parameters for high quality low gap material, sensitively influences the optical and electronic properties of the samples. The optimum substrate temperature (TS≍=225°C) is found to be lower than for the deposition of a-Si:H (TS≍250°C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 339
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Tanaka, K. and Matsuda, A. in Materials Issues in Amorphous-Semiconductor Technology, edited by Adler, O., Hamakawa, Y., and Madan, A. (Mater. Res. Soc. Proc. 70, Pittsburgh, PA 1986), pp. 245–255.Google Scholar
2. Ichimura, T. et al., J. Non-Cryst. Sol. 77&78, 901 (1985).Google Scholar
3. Weller, H.C. et al., 19th IEEE PVSC, New Orleans, 1987, pp. 872–877.Google Scholar
4. Cody, C.D., in Semiconductors and Semimetals 21 Part B, edited by J.I., Pankove (Academic Press, Inc., Orlando, 1984), p. 11.Google Scholar
5. den Boer, W., J. de Phys., C4, suppl. no. 10, C4–451 (1981).Google Scholar
6. Lampert, M.A. and Mark, P., Current Injection in Solids, edited by Booker, H.G. and DeClaris, N. (Academic Press, New York, 1970).Google Scholar
7. Finger, F. et al., J. Non-Cryst. Sol. 77&78, 731 (1985).Google Scholar
8. Weller, H.C. et al., J. Non-Cryst. Sol. 97&98, 1071 (1987).Google Scholar
9. Schubert, M.B. et al., to be published in: IEEE Transactions on Electron Devices, special issue “Amorphous Semiconductor Devices”, 1989.Google Scholar