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Correlation Between Bulk Morphology and Luminescence in Porous Silicon Investigated by Evaporation Induced Pore Collapse

Published online by Cambridge University Press:  17 March 2011

Donald J. Sirbuly ,
Michael D Mason  and
Steven K. Buratto
Donald J. Sirbuly
Affiliation:
Department of Chemistry and BiochemistryUniversity of California, Santa Barbara, CA 93106
Michael D Mason
Affiliation:
Department of Chemistry and BiochemistryUniversity of California, Santa Barbara, CA 93106
Steven K. Buratto
Affiliation:
Department of Chemistry and BiochemistryUniversity of California, Santa Barbara, CA 93106
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Abstract

We use a combination of scanning electron microscopy, laser scanning confocal microscopy and luminescence spectroscopy to correlate the emission properties of anodized porous silicon (PS) with film morphology in samples that have undergone evaporation induced collapse of the underlying porous structure. Several PS samples were investigated as a function of the current density (J) and total etch time, while the total charge (Q) injected per unit area (and the total Si removed) was kept constant during etching. From this data two classes of PS samples emerge. Porous silicon samples produced at high current density have a 3-dimensional pore network with a narrow distribution of blue-green emitting chromophores. In contrast, low current density samples form a 2-dimensional pore network normal to the Si substrate with larger chromophores and exhibit broad red luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.21.1
Copyright
Copyright © Materials Research Society 2001

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