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Copper Interactions in Thick Film Multilayer Ceramics: Dielectric Blushing and Performance

Published online by Cambridge University Press:  25 February 2011

D. P. Button  and
V. P. Siuta
D. P. Button
Affiliation:
– Invited Paper E. I. du Pont de Nemours and Company, Photosystems and Electronic Products Dept., Experimental Station, Wilmington, DE 19898.
V. P. Siuta
Affiliation:
– Invited Paper E. I. du Pont de Nemours and Company, Photosystems and Electronic Products Dept., Experimental Station, Wilmington, DE 19898.
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Abstract

As the popularity of copper metallizations grows in ceramic-based electronic applications, an understanding of copper-ceramic interactions during firing assumes greater technological importance. Copper metallizations often interact with thick film microcircuit dielectrics during the firing of multilayer interconnects to yield rosy discoloration, or so-called blushing or staining of this insulating ceramic. In the conventional filled-glass dielectrics studied here, blushing is concentrated at special interfaces over Cu conductors where submicron Cu precipitates are localized. Several firing strategies which improve binder burnout can be employed using standard belt furnaces to depress, if not prevent, this precipitation. A multistage blushing mechanism is proposed that is dominated by the reduction of Cu ions in the ceramic by carbonaceous products formed when firing dielectric compositions under non-oxidizing conditions. Dielectric glass composition also plays an important role with respect to solid state Cu ion interdiffusion. Theoretical and experimental analyses show that materials interactions responsible for blushing in conventionally-processed CMS (copper multilayer system) microcircuits degrade neither dielectric performance nor reliability. Microcircuit dielectrics metallized by Cu compare favorably to noble metal systems including gold, an accepted military standard. CMS dielectrics exhibit high activation barriers for ionic conductivity, and an absence of shorting due to solid state diffusion during high temperature/ high bias testing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 72: Symposium G – Electronic Packaging Materials Science II , 1986 , 145
Copyright
Copyright © Materials Research Society 1986

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References

1. Zelberstein, R.M. and Queenan, J., IEEE Trans. CHMT–8 (4), 481–484 (1985).Google Scholar
2. Bellefeuille, F. et al, Copper Multilayer Manufacturing Technology (Air Force Wright Aeronautical Laboratories, Technical Report No. AFWAL-TR–82–4114, 1982).Google Scholar
3. Bacher, R.J. and Siuta, V.P., in Proc. 36th Electronic Components Conf. (IEEE, New York, 1986) pp. 471–480.Google Scholar
4. Larry, J.R., Rosenberg, R.M., and Uhler, R.O., IEEE Trans. CHMT–3 (2), 211–225 (1980).Google Scholar
5. Vest, R.W., Ceramic Bulletin 65 (4), 631–636 (1986).Google Scholar
6. Holmes, P.J. and Loasby, R.G., Handbook of Thick Film Technology (Electrochemical Publications, Ltd., Glascow, 1976).Google Scholar
7. Brown, W.P. and Tipper, C.F.H., J. Appl. Polymer Sci. 22, 1459–1468 (1978).Google Scholar
8. Loasby, R.G., Davey, N., and Barlow, H., Solid State Technology, May 1972.Google Scholar
9. Weyl, W.A., Coloured Glasses (Soc. Glass Technology, Sheffield, England, 1951) pp. 154–167; 420–435.Google Scholar
10. Paul, A., Glass Chemistry (Chapman and Hall, New York, 1982) pp. 264–270.Google Scholar
11. Pitkanen, D.E., Cummings, J.P., and Sartell, J.A., in Proc. International Microelectronics Symp. (ISHM, Montgomery, AL, 1979) pp. 148–156;D.E. Pitkanen, J.P. Cummings, and J.A. Sartell, in Proc. International Microelectronics Symp. (ISHM, Montgomery, AL, 1979) (1980) pp. 49–57.Google Scholar
12. Poetzinger, J.E. and Risbud, S.H., J. de Physique (Paris) Coll. C4 (Tome 46), 147–152 (1985).Google Scholar
13. Kriven, W.M. and Risbud, S.H., in Proc. Materials Res. Soc. Symp.: Electronic Packaging Materials Science, vol.40, edited by E.A., Geiss, K.N., Tu and D.R., Uhlmann (Mat. Res. Soc., Pittsburg, 1985) pp. 323–328; Materials Lett. 3 (12), 471–474 (1985).Google Scholar
14. Morrissey, K.J. and Button, D.P., to be published.Google Scholar
15. Doremus, R.H., Glass Science (Wiley, New York, 1973) pp. 146–176.Google Scholar
16. Anderson, O.L. and Stuart, D.A., J. Am. Ceramic Soc. 37, 573–580 (1954).CrossRefGoogle Scholar
17. Scklovskii, B.I. and Efros, A.L., “Percolation Theory,” Chapt. 5 in Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984) pp. 106–111.CrossRefGoogle Scholar
18. Hughes, K. and Isard, J.O., in Physics of Electrolytes, vol.1, edited by J., Hladik (Academic Press, New York, 1972) p. 351–400.Google Scholar
19. Tuller, H.L., Button, D.P., and Uhlmann, D.R., J. Non-Cryst. Solids 40, 93–118 (1980).CrossRefGoogle Scholar
20. Day, D.E., J. Non-Cryst. Solids 21, 343–372 (1976).CrossRefGoogle Scholar
21. Button, D.P., Fusco, F., and Tuller, H. L., to be published.Google Scholar
22. Schneider, M. (private communication).Google Scholar
23. Needes, C.R.S., to be published (private communication).Google Scholar
24. Minford, W.J., IEEE Trans. CHMT–5 (3), 297–300 (1982).Google Scholar
25. Needes, C.R.S. and Button, D.P., in Proc. 35th Electronic Components Conf. (IEEE, New York, 1985) pp. 505–511.Google Scholar