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Controlled Grain Size and Location in GE Thin Films on Silicon Dioxide by Low Temperature Selective Solid Phase Crystallization

Published online by Cambridge University Press:  15 February 2011

C. M. Yang  and
Harry A. Atwater
C. M. Yang
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, haa@daedalus.caltech.edu
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, haa@daedalus.caltech.edu
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Abstract

Selective solid phase crystallization for control of grain size and location in polycrystalline thin Ge films on amorphous silicon dioxide substrates is described. The approach consists of selective solid phase crystal nucleation via an alloy reaction at predefined nucleation sites, which consist of metal islands deposited on top of the amorphous Ge film, followed by lateral solid phase epitaxial growth. Grain sizes as large as 30 μm have been achieved in 50 nm thick Ge films at temperatures less than 475 °C.

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