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Controlled Grain Size and Location in GE Thin Films on Silicon Dioxide by Low Temperature Selective Solid Phase Crystallization

Published online by Cambridge University Press:  15 February 2011

C. M. Yang  and
Harry A. Atwater
C. M. Yang
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, haa@daedalus.caltech.edu
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, haa@daedalus.caltech.edu
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Abstract

Selective solid phase crystallization for control of grain size and location in polycrystalline thin Ge films on amorphous silicon dioxide substrates is described. The approach consists of selective solid phase crystal nucleation via an alloy reaction at predefined nucleation sites, which consist of metal islands deposited on top of the amorphous Ge film, followed by lateral solid phase epitaxial growth. Grain sizes as large as 30 μm have been achieved in 50 nm thick Ge films at temperatures less than 475 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 113
Copyright
Copyright © Materials Research Society 1996

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References

[1] Ohmachi, Y., Nishioka, T. and Shinoda, Y., Appl. Phys. Lett. 43 971 (1983).Google Scholar
[2] Yamaguchi, M. and Itoh, Y., J.Appl.Phys., 60, 413 (1986).Google Scholar
[3] Choi, S.W., Bachmann, K.J., Timmons, M.L., Colpitts, T.S., and Posthill, J.B., J. Electrochem. Soc. 139 312 (1992);J.C. Chen, M. Ladle Ristow, J.I. Cubbage and J.G. Werthen, J. Electronic Mater., 21 347 (1992).Google Scholar
[4] Bosnell, J.R. and Voisey, U.C., Thin Solid Films 6 161 (1969).Google Scholar
[5] Hayzelden, C., Batstone, J.L. and Cammarata, R.C., Appl. Phys. Lett. 60 255 (1992).Google Scholar
[6] Smith, D.A., Grovenor, C.R.M., Batson, P.E. and Wong, C., Ultramicroscopy, 14 131 (1984).Google Scholar
[7] Tan, Z., Heald, S.M., Rapposch, M., Bouldin, C.E. and Woicik, J.C., Phys. Rev. B46 9505 (1992).Google Scholar
[8] Oki, F., Ogawa, Y., and Fujiki, Y., Jpn. J. Appl.Phys. 8, 1056 (1969).Google Scholar
[9] Edelman, F., Komem, Y., Bendayan, M. and Beserman, R., J. Appl. Phys. 72 5153 (1992).Google Scholar
[10] Olson, G.L. and Roth, J.A., Chapter 7 in Handbook of Crystal Growth, Hurle, D.T.J., ed., Elsevier, Amsterdam, 1994, pp. 256–311.Google Scholar
[11] Lu, G.Q., Nygren, E. and Aziz, M.J., J.Appl.Phys., 70 5323 (1991).Google Scholar