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Control of Ordering-Disordering Defect Parameters for the Realization of Efficient Opto-Electronic Devices

Published online by Cambridge University Press:  03 September 2012

J. P. André  and
P. Bellon
J. P. André
Affiliation:
Laboratoires d'Electronique Philips 22 avenue Descartes, 94453 Limeil-Brévannes Cedex, (France)
P. Bellon
Affiliation:
SRMP, Centre d'Etudes de Saclay CEA, 91191 Gif-sur-Yvette, (France)
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Abstract

Epitaxial growth of III/V compounds with tight band gap engineering is essential for the realization of efficient optoelectronic devices. Using MOVPE, high quality materials have been grown with anomalous low band gap energy. The order/disorder phenomena and their relation to the band gap energy in the GalnP/AlGalnP system are reported. The effect of the growth parameters on the ordered phase and the band gap Eg will be presented by using TEM and PL characterizations. The growth models will be discussed. The importance of the ordering phenomena will be illustrated by short wavelength laser application, the emission wavelength being as low as 650 ran at 300 K. And a possible future laser structure will be proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 835
Copyright
Copyright © Materials Research Society 1992

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References

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