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Control of Etching in Laser—Chemical Reaction of Mn—Zn Ferrite by MeV Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Y. F. LU. M. Takai ,
H. Sanda ,
A. Chayahara ,
M. Satou ,
T. Minamisono  and
S. Namba
Y. F. LU. M. Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
H. Sanda
Affiliation:
Sensor Device Laboratory, Central Research Institute, Glory Co. Ltd., Hyogo 670, Japan
A. Chayahara
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
M. Satou
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
T. Minamisono
Affiliation:
Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan
S. Namba
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

The change in the behavior of laser—induced etching of Mn—Zn ferrite by MeV ion implantation has been investigated. The etching induced by Ar+ laser irradiation in a H3PO4 solutipn w~s completely suppressed by implanting 3 MeV Au+ to a dose of 1x1016 cm-2 when the laser induced local temperature rise was below the melting point of the ferrite. The etching suppression disappeared when the Au+ implanted sample was thermally annealed at 900 ºC for 30 min. The suppression is found to be related to the crystallinity change induced by ion implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 301
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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