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Contribution to the Dielectric Behavior of Relaxers from the Surface of Nano-Order Cluster in the Materials

Published online by Cambridge University Press:  10 February 2011

Z. -Y. Cheng ,
Aqiang Guo  and
R. S. Katiyar
Z. -Y. Cheng
Affiliation:
Department of Physics, P. O. Box 23343, University of Puerto Rico, San Juan, PR 00931–3343, USA, E-mail: cheng@upracd.upr.clu.edu
Aqiang Guo
Affiliation:
Department of Physics, P. O. Box 23343, University of Puerto Rico, San Juan, PR 00931–3343, USA.
R. S. Katiyar
Affiliation:
Department of Physics, P. O. Box 23343, University of Puerto Rico, San Juan, PR 00931–3343, USA.
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Abstract

Based on the analysis of the dielectric behavior of relaxor ferroelectrics, it is assumed that the material has two polarization processes. Thus, a formula, which can fit the experimental results very well, is proposed to describe the temperature and frequency dependence of the dielectric constant. The fitted results show that there is a resonance process in the material and the peak of the dielectric constant is determined with both the relaxation and resonance processes. The relaxation time analysis shows that the peak of the dielectric constant indeed consists of two parts.

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References

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