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Contactless Measurements of the Surface Recombination Velocity of P—N and High—Low (P—P+, N—N+) Junctions Fabricated by Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

A. Usami ,
N. Yamada ,
K. Matsuki ,
T. Takeuchi  and
T. Wada
A. Usami
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso—cho, Showa—ku, Nagoya 466, Japan
N. Yamada
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso—cho, Showa—ku, Nagoya 466, Japan
K. Matsuki
Affiliation:
Dainippon Screen Mfg. Co., Ltd., Furukawa—cho, Hazukashi, Fushimi—ku, Kyoto 612, Japan
T. Takeuchi
Affiliation:
Dainippon Screen Mfg. Co., Ltd., Furukawa—cho, Hazukashi, Fushimi—ku, Kyoto 612, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Dept. of Electrical and Computer Engineering, Gokiso—cho, Showa—ku, Nagoya 466, Japan
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Abstract

A photoconductive decay curve is analyzed theoretically to determine the surface recombination velocity and the bulk lifetime separately. And it can be applied to experimental photoconductive decay curves using the reflectance microwave probe method. Then it is verified numerically and experimentally to lower the effective surface recombination velocity at p—n and high—low junctions. The high—low junctions used in this study were fabricated from the ionimplanted wafer by rapid thermal annealing or furnace annealing. Then it is shown that the measurement system in relation to surface recombination can apply to evaluations in the ion implantation and its annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 359
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Boulou, M. and Bois, D., J. Appl. Phys. 48, 4713 (1977).Google Scholar
2. Wu, Ching-Yuan and Shen, Wen-Zen, Solid-St. Electron. 23, 209 (1980).Google Scholar
3. Moore, A. R. and Webster, W. M., Proc. I. R. E. 43, 427 (1955).Google Scholar
4. Usami, A., Nakamura, M., Aoyama, K. and Wada, T., Technical Digest of the Int'l PVSEC-31, B-Ip-4 (1987).Google Scholar
5. Usami, A., Katayama, M., Tokuda, Y. and Wada, T., Mat. Res. Soc. Symp. Proc. 71, 211 (1986).Google Scholar
6. Slotboom, J. W. and Graaff, H. C. de, Solid-St. Electron. 19, 857 (1976).Google Scholar
7. Fossum, Jerry G., IEEE Trans. Electron Devices ED–24, 322 (1977).Google Scholar
8. Usami, A., Tokuda, Y., Katayama, M., Kaneshima, S. and Wada, T., J. Phys. D: Appl. Phys. 19, 1079 (1986).CrossRefGoogle Scholar
9. Dainippon Screen Engineering of America Inc. Santa Clara Office c/o Prism Technologies Inc. 2620 Augustine Dr. #145 Santa Clara, CA 95054 U. S. A.Google Scholar