Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-04-26T18:21:51.444Z Has data issue: false hasContentIssue false
  • English
  • Français

Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications

Published online by Cambridge University Press:  31 January 2011

Jun-Fei Zheng ,
Phil Chen ,
William Hunks ,
Matthias Stender ,
Chongying Xu ,
Weimin Li ,
Jeff Roeder ,
Smuruthi Kamepalli ,
Carl Schell  and
James Reed
...Show all authors
Jun-Fei Zheng
Affiliation:
jfzheng@atmi.com, ATMI Inc., Advanced Technology Development, Danbury, Connecticut, United States
Phil Chen
Affiliation:
Pchen@atmi.com, ATMI Inc., Advanced Technology Development, Danbury, Connecticut, United States
William Hunks
Affiliation:
WHunks@atmi.com, ATMI Inc., Advanced Technology Development, Danbury, Connecticut, United States
Matthias Stender
Affiliation:
matthes_us@yahoo.com, ATMI Inc., Advanced Technology Development, Danbury, Connecticut, United States
Chongying Xu
Affiliation:
CXu@atmi.com, ATMI Inc., Advanced Technology Development, Danbury, Connecticut, United States
Weimin Li
Affiliation:
wli@atmi.com, ATMI Inc., Advanced Technology Development, Danbury, Connecticut, United States
Jeff Roeder
Affiliation:
jroeder@atmi.com, ATMI Inc., Advanced Technology Development, Danbury, Connecticut, United States
Smuruthi Kamepalli
Affiliation:
skamepalli@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Carl Schell
Affiliation:
cschell@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
James Reed
Affiliation:
jreed@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Jim Ricker
Affiliation:
jricker@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Regino Sandoval
Affiliation:
rsandoval@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Jeffery Fournier
Affiliation:
jpfournier@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Wally Czubatyj
Affiliation:
w.czubatyj@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Guy Wicker
Affiliation:
gwicker@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Chuck Dennison
Affiliation:
cdennison@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Stephen Hudgens
Affiliation:
shudgens@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Tyler Lowrey
Affiliation:
tlowrey@ovonyx.com, Ovonyx Technology Inc., Rochester Hills, Michigan, United States
Get access

Abstract

We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposition. GeSbTe films adhere well to SiO2, TiN, and TiAlN. The morphology and adhesion are stable in 420°C post process. By annealing at 365°C, amorphous GeSbTe films converted into crystalline GeSbTe with polycrystalline grain sizes of 5nm. Film resistivity in the crystalline phase ranged from 0.001 to 0.1 Ω-cm, suitable for device applications. Phase change devices fabricated with confined via structures filled with MOCVD GeSbTe showed cycle endurances up to 1×1010 with a dynamic set/rest resistance of two orders of magnitude.

Keywords

chemical vapor deposition (CVD) (deposition)morphologyphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H14-11
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Ovshinsky, S. R., Phys. Rev. Lett. 21, 1450 (1968).Google Scholar
2 Lai, S., Tech. Dig. Int. Electronic Devices Meet. 2003, 255.Google Scholar
3 Lee, J. I., Cho, S. L., Park, Y. L., Bae, B. J., Park, J. H., Park, J. S., An, H. G., Bae, J. S., Ahn, D. H., Kim, Y. T., Horrii, H., Song, S. A., Shin, J. C., Park, S. O., Kim, H. S., Chung, U.-I., Moon, J. T., and B.I., Ryu, Symp. of VLSI Tech. Dig., 2007, 102 Google Scholar
4 Im, D. H., Lee, J. I., Cho, S. L., An, H. G., Kim, D. H., Kim, I. S., Park, H., Ahn, D. H., Horii, H., Park, S. O., Chung, U-In, and Moon, J. T., Dig. Int. Electronic Devices Meet. 2008, 211 Google Scholar
5 Pirovano, A. Pellizer, F., Tortorelli, I., Harrigan, R., Magistretti, M., Petruzza, P., Varesi, E., Erbetta, D., Marangon, T., Bedeschi, F., Fackenthal, R., Atwood, G., and Bez, R., Solid-State Electronics, 52, 1467 (2008).Google Scholar
6 Choi, B.J., Choi, S., Shin, Y. C., Hwang, C. S., Lee, J. W., Jeong, J., Kim, Y. J., Hwang, S.-Y., and Hong, S. K., J. Electrochem. Soc. 154, H318 (2007).Google Scholar
7 Pore, V., Hatanpaa, T., Ritala, M., Leskela, M., J. of American Chemical Society, 131, 3478 (2009)Google Scholar
8 Kato, T. and Tanaka, K., Japanese, J. Appl. Phys. 44, 7340 (2005).Google Scholar
9 http://www.semiconductor.net/article/CA6621100.html:Google Scholar