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A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion

Published online by Cambridge University Press:  21 March 2011

Julie L. Ngau ,
Peter B. Griffin  and
James D. Plummer
Julie L. Ngau
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305, U.S.A.
Peter B. Griffin
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305, U.S.A.
James D. Plummer
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305, U.S.A.
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Abstract

In this work, the time evolution of B transient enhanced diffusion (TED) suppression due to the incorporation of 0.018% substitutional carbon in silicon was studied. The combination of having low C concentrations, which reduce B TED without completely eliminating it, and having diffused B profiles for several times at a single temperature provides much data upon which various models for the suppression of B TED can be tested. Recent work in the literature has indicated that the suppression of B TED in C-rich Si is caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. Attempts to model our data with these two reactions revealed that the time evolved diffusion behavior of B was not accurately simulated and that an additional reaction that further reduces the Si self-inter- stitial concentration was necessary. In this work, we incorporate a carbon interstitial, carbon substitutional (CiCs) pairing mechanism into a comprehensive model that includes the C kick-out reaction, C Frank-Turnbull reaction, {311} defects, and boron interstitial clusters (BICs) and demonstrate that this model successfully simulates C suppression of B TED at 750 °C for anneal times ranging from 10 s to 60 min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J6.10
Copyright
Copyright © Materials Research Society 2001

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References

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