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Compositional and structural studies of amorphous GaN grown by ion-assisted deposition

Published online by Cambridge University Press:  21 March 2011

U. D. Lanke ,
A. Koo ,
B. J. Ruck ,
H. K. Lee ,
A. Markwitz ,
V. J. Kennedy ,
M. J. Ariza ,
D. J. Jones ,
J. Rozière  and
A. Bittar
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U. D. Lanke
Affiliation:
School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
A. Koo
Affiliation:
School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
B. J. Ruck
Affiliation:
School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
H. K. Lee
Affiliation:
School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand Department of Physics, Kangwon National University, Chunchon, Korea
A. Markwitz
Affiliation:
Institute of Geological and Nuclear Sciences, Lower Hutt, New Zealand
V. J. Kennedy
Affiliation:
Institute of Geological and Nuclear Sciences, Lower Hutt, New Zealand
M. J. Ariza
Affiliation:
Laboratoire des Agrégats Moléculaires et Matériaux Inorganiques UMR CNRS 5072, Université Montpellier II, Montpellier, France
D. J. Jones
Affiliation:
Laboratoire des Agrégats Moléculaires et Matériaux Inorganiques UMR CNRS 5072, Université Montpellier II, Montpellier, France
J. Rozière
Affiliation:
Laboratoire des Agrégats Moléculaires et Matériaux Inorganiques UMR CNRS 5072, Université Montpellier II, Montpellier, France
A. Bittar
Affiliation:
Measurement Standards Laboratory, Industrial Research Limited, Lower Hutt, New Zealand
H. J. Trodahl
Affiliation:
School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
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Abstract

Amorphous GaN films have been deposited onto various substrates by ion-assisted deposition. The films were deposited at room temperature using nitrogen ion energies in the range 40-900 eV. Rutherford backscattering spectroscopy and nuclear reaction analysis show that the Ga:N atomic ratio is approximately one for films grown with ion energy near 500 eV; these films have the highest transparency. Films grown with ion energies below 300 eV are Ga rich, and show reduced transparency across the visible. Raman spectroscopy, x-ray diffraction, and transmission electron microscopy confirm the amorphous nature of the films. Annealing studies on a-GaN establish that the films begin to crystallise at a temperature of about 700 C. To investigate the local bonding environment of the Ga or N atoms, we have measured the extended x-ray absorption fine structure (EXAFS) of the transparent GaN films. The EXAFS results indicate that the films are dominated by heteropolar tetrahedral bonding, with a low density of homopolar bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.10.1
Copyright
Copyright © Materials Research Society 2002

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