Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-28T23:46:43.451Z Has data issue: false hasContentIssue false
  • English
  • Français

Composition and Strain Analysis of Semiconductor Heterostructures Using Thickness Fringes on Tem Images

Published online by Cambridge University Press:  21 February 2011

H. Kakibayashi ,
R. Tsuneta  and
F. Nagata
H. Kakibayashi
Affiliation:
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185, Japan
R. Tsuneta
Affiliation:
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185, Japan
F. Nagata
Affiliation:
Hitachi Instrument Engineering, Ltd., Katsuta, Ibaraki 312, Japan
Get access

Abstract

Composition and strain depth profiles in heterostructures such as AlGaAs/GaAs, InGaAs/InP and SiGe/Si have been analyzed with a high resolution of 0.5 nm by using the thickness fringes in a transmission electron microscope image. This diagnostic method is found to successfully evaluate the compositional disordering caused by annealing multiple quantum well structures with abrupt interfaces, and determine the difference in strain distribution in the strained-layers with various lattice mismatches. Both the composition and strain depth-profiles are analyzed quantitatively by the image simulation based on the dynamical theory of electron diffraction. This method is also useful for sensitively detecting ion-implantation-induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 213
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thijs, P. J. A., Tiemeijer, L. F., Kuindersma, P. T., Binsma, J. I. M. and Dongen, T. V., IEEE J. Quantum Electron. 27, 1426 (1991).Google Scholar
2. Petroff, P. M., Gossard, A. C., W. Wiegmann and Savage, A., J. Crystal Growth 44, 5 (1978).Google Scholar
3. Kakibayashi, H. and Itoh, K., Jpn. J. Appl. Phys. 30, L52 (1991).Google Scholar
4. Wang, X., J. Electrochem. Soc. 130, 950 (1983).Google Scholar
5. Goto, S., Kakibayashi, H., Kawata, M. and Usagawa, T., Appl. Surf. Sci. 41/42, 480 (1989).Google Scholar
6. Tsuchiya, T., Taniwatari, T. and Kawano, T., Int. Symp. Gallium Arsenide and Related Compounds, 1992, Inst. Phys. Conf. Ser. No. 129, 269 (1993).Google Scholar
7. Tanaka, N., Mihama, K. and Kakibayashi, H., Jpn. J. Appl. Phys. 30, L959 (1991).Google Scholar