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Competitive Pairing and the Chemistry of Coadsorbed Hydrogen and Halogens on Ge(100)

Published online by Cambridge University Press:  22 February 2011

Yuemei L. Yang ,
Stephen M. Cohen  and
Mark P. D'Evelyn
Yuemei L. Yang
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, TX 77251–1892
Stephen M. Cohen
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, TX 77251–1892
Mark P. D'Evelyn
Affiliation:
Department of Chemistry and Rice Quantum Institute, Rice University, Houston, TX 77251–1892
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Abstract

The chemistry of coadsorbed H and X (X=C1, Br) on semiconductor surfaces is important in epitaxial growth of silicon from chlorosilanes and of SixGe1−x alloys, in hydrogenating/ halogenating cycles in atomic layer epitaxy, and also provides an interesting model system, yet has received little attention to date. We have investigated the interaction of HC1 and HBr with Ge(100) by temperature-programmed desorption, and find that H2, HCl and HBr each desorb with near-first-order kinetics near 570–590 K and that GeCl2 and GeBr2 desorb with near-second-order kinetics near 675 K and 710 K, respectively. Analysis of the desorption kinetics of H2 and HX provides evidence that adsorbed H and X atoms pair preferentially in a qualitatively similar way as H atoms adsorbed alone on Ge(100)2×1 or Si(100)2×1 and that pairing of H+X occurs in competition with pairing of H+H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 421
Copyright
Copyright © Materials Research Society 1993

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References

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