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Comparison of Microwave ECR and RF Plasmas for Dry Etching of Single Crystal 6H-SiC

Published online by Cambridge University Press:  21 February 2011

J. R. Flemish ,
K. Xie ,
W. Buchwald ,
L. Casas ,
J. H. Zhao ,
G. McLane  and
M. Dubey
J. R. Flemish
Affiliation:
Army Research Laboratory-EPSD, Fort Monmouth, NJ 07703
K. Xie
Affiliation:
ECE Dept., Rutgers University, Piscataway, NJ 08855
W. Buchwald
Affiliation:
Army Research Laboratory-EPSD, Fort Monmouth, NJ 07703
L. Casas
Affiliation:
Army Research Laboratory-EPSD, Fort Monmouth, NJ 07703
J. H. Zhao
Affiliation:
ECE Dept., Rutgers University, Piscataway, NJ 08855
G. McLane
Affiliation:
Army Research Laboratory-EPSD, Fort Monmouth, NJ 07703
M. Dubey
Affiliation:
Army Research Laboratory-EPSD, Fort Monmouth, NJ 07703
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Abstract

Electron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of-100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 145
Copyright
Copyright © Materials Research Society 1994

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References

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