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A Comparative Study of the Strength of Si, SiN and SiC used at Nanoscales

Published online by Cambridge University Press:  01 February 2011

Tuncay Alan  and
Pasqualina M. Sarro
Tuncay Alan
Affiliation:
t.alan@tudelft.nl, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics (DIMES), PO Box 5053, Delft, 2600GB, Netherlands
Pasqualina M. Sarro
Affiliation:
sarro@dimes.tudelft.nl, Delft University of Technology, Electronic Components, Technology and Materials, Delft, 2600GB, Netherlands
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Abstract

Microelectromechanical systems (MEMS) are being used in many critical applications that require very high stress levels. To properly design MEMS components, mechanical properties should be characterized testing relevant sized samples that are fabricated with the same procedures as the final structure. In this paper we use atomic force microscopy (AFM) experiments to study the fracture strength statistics of polycrystalline SiC and SiN nanobeams, and compare their mechanical performance with the performance of previously tested Si nanostructures. Using the same AFM method and similar sample shape and sizes, allows a direct comparison to be made, which will be useful in determining the best material for different mechanical applications and also to validate the theoretical limits.

Keywords

fracturemicroelectro-mechanical (MEMS)scanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1052: Symposium DD – Microelectromechanical Systems–Materials and Devices , 2007 , 1052-DD06-31
Copyright
Copyright © Materials Research Society 2008

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References

1 Tsuchiya, T., Tabata, O., Sakata, J., Taga, Y., J. of Microelectromech. Sys., 7, 106 (1998).Google Scholar
2 Alan, T., Hines, M. A., Zehnder, A. T.,Appl. Phys. Lett. 89, 091901 (2006).Google Scholar
3 Alan, T., Zehnder, A. T., Sengupta, D., Hines, M. A., Appl. Phys. Lett. 89, 231905 (2006)Google Scholar
4 Jadaan, O.M, Nemeth, N.N., Bagdahn, J., Sharpe, W. N., J. Mat. Sci., 38, 4087 (2003).Google Scholar
5 Serre, C., Perez-Rodriguez, A., Morante, J.R., Gorostiza, P., Esteve, J., Sens. Act. A, 74, 134 (1999).Google Scholar
6 Alan, T., Ph.D. Dissertation, Cornell University (2007).Google Scholar
7 Freund, L.B. and Suresh, S., Thin Film Materials, Cambridge University Press (2003).Google Scholar
8 McCarty, A., Chasiotis, I., Thin Sol. Films, 515, 3267 (2007).Google Scholar
9 Gao, D., Carraro, C., Radmilovic, V, Howe, R.T., Maboudian, R., J. Microelectromech. Syst., 13, 972 (2004).Google Scholar