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A Comparative Study of Near-Surface Effects Due to Very High Fluence H+ Implantation In Single Crystal FZ, CZ, and Web SI*

Published online by Cambridge University Press:  25 February 2011

W.J. Choyke ,
R.B. Irwin ,
J.N. Mcgruer ,
J.R. Townsend ,
N.J. Doyle ,
B.O. Hall ,
J.A. Spitznagel  and
S. Wood
W.J. Choyke
Affiliation:
University of Pittsburgh and Westinghouse R&D Center, Pittsburgh, PA 15235;
R.B. Irwin
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260;
J.N. Mcgruer
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260;
J.R. Townsend
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260;
N.J. Doyle
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
B.O. Hall
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
J.A. Spitznagel
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
S. Wood
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
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Abstract

Crystals of float-zone, Czochralski, and Web Si having widely differing oxygen concentrations were imrplanted at 300°K with large fluences of hydrogen. Experiments using RBS/channeling, profilometry and microscopy are reported. For room temperature implants the step-height h, the distribution of displaced atoms ND(x) and the total number of displaced atoms/cm2 (aD) are all essentially independent of the oxygen convent of the Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 359
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

Supported in part by NSF Grant DMR-81–02968.

References

REFERENCES

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