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Comparative studies on photovoltaic performance of InN nanostructures/p-Si(100) heterojunction devices grown by molecular beam epitaxy

Published online by Cambridge University Press:  11 July 2012

Thirumaleshwara N Bhat ,
Mohana K Rajpalke ,
Mahesh Kumar ,
Basanta Roul  and
S B Krupanidhi
Thirumaleshwara N Bhat
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA
Mohana K Rajpalke
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA
Mahesh Kumar
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA Central Research Laboratory, Bharat Electronics, Bangalore-560013, INDIA
Basanta Roul
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA Central Research Laboratory, Bharat Electronics, Bangalore-560013, INDIA
S B Krupanidhi*
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore- 560012, INDIA
*
*Corresponding author: sbk@mrc.iisc.ernet.in
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Abstract

Comparative studies have been carried out on the performance of the photovoltaic devices with dissimilar shapes of the InN nanostructures fabricated on p-Si (100). The devices fabricated with the nanodots show a superior performance compared to the devices fabricated with the nanorods. The discussions have been carried out on the superior junction property, larger effective junction area and inherent random pyramidal topographical texture of the cell fabricated with nanodots. Such single junction devices exhibit a promising fill factor and external quantum efficiency of 38% and 27%, respectively, under concentrated AM1.5 illumination.

Keywords

molecular beam epitaxy (MBE)nanostructurephotovoltaic

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