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Comparative Cu Diffusion Studies in Advanced Metallizations of Cu and Al-Cu Based Thin Films

Published online by Cambridge University Press:  25 February 2011

D. Gupta
D. Gupta*
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
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Abstract

Availability of diffusion data is important in the evaluation of the prospect of substituting Cu for Al-Cu metallization for improving electrical and electromigration performance. Measurements have been made of 67Cu radioactive tracer diffusion in Cu, Cu-0.4Zr and several Al-Cu thin films of commonly used compositions. Grain boundary self diffusion in Cu is described by δDb= 1.5xl0-9 exp( — 0.92eV/kT) cm3/ sec. The activation energy for Cu diffusion in Al, Al-l%Cu and Al-0.5Cu-0.15Ti thin films depends on the amount of Cu present and varies in the 0.4 - 1.0 eV range. The measured diffusion parameters in the two alloy systems are compared and contrasted with those available from electromigration studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 209
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Rothman, S. G. and Peterson, N. L., Phys,. Stat. Solidi, 35, 305(1969)Google Scholar
2 Rosenberg, R. and Berenbaum, L., Appl. Phys. Lett., 12, 201(1968)CrossRefGoogle Scholar
3 Barreau, G., Brunel, G., Cizeron, G. and Lacombe, P., Mem. Sci. Rev. Metall., 68, 357(1971)Google Scholar
4 Rosenberg, R., Appl. Phys. Lett., 16, 27(1970)Google Scholar
5 Gupta, D., J. Appl. Phys., 44, 4455(1973)Google Scholar
6 Ames, I., d'Heurle, F. and Horstmann, R., IBM J. Res. Develop., 14, 461(1970)Google Scholar
7 Howard, J. K. and Ross, R. F., Appl. Phys. Lett., 18, 344(1971)Google Scholar
8 Rodbell, K. P., DeHaven, P. W. and Mis, J. D., Mat. Res. Soc. Proc., 225, 91(1991)CrossRefGoogle Scholar
9 Rothman, S. G., Diffusion in Crystalline Solids, Eds. G. R. Murch and A. S. Nowick(Academic Press New York 1984), ppl–61 Google Scholar
10 Whipple, R. T. P., Phil. Mag., 45, 1225(1954)CrossRefGoogle Scholar
11 Suzouka, T., J. Phys. Soc. Jpn., 219, 839(1964)Google Scholar
12 Peterson, N. L. and Rothman, S. G., Phys. Rev., B 1, 3264(1971)Google Scholar
13 Naik, M. C., Anand, M. S., Paul, A. R. and Agarwala, R. P., Phys. Stat. Solidi, 30, 319(1968)Google Scholar
14 Cermak, J., Phys. Stat. Solidi(a), 121, K31(1990)Google Scholar
15 Chamberlain, M. B. and Lehoczky, S. L., Thin Solid Films, 45, 189(1977)Google Scholar
16 Huntington, H. B., Diffusion in Solids - Recent Advances, Eds. Nowick, A. S. and J. J. Burton, (Academic Press New York 1975)p.303 CrossRefGoogle Scholar
17 d'Heurle, F. and Ho, P. S., Thin Films-Interdiffusion and Reactions, Eds. Poate, J. M., K. N. Tu and J. W. Mayer, ( John Wiley & sons New York 1978)p. 243 Google Scholar
18 Grimme, D., Atomic Transport in Solids and Liquids, Eds. Lodding, A. and T. Lagerwall, (verlag der Zeitschrift fur Naturforschung, Tübingen 1971)p.65 Google Scholar
19 Penney, R. V., J. Phys. Chem. Solids, 25, 335(1964)CrossRefGoogle Scholar
20 Rodbell, K. P. and Shatynski, S. R., Thin Solid Films, 108, 95–102(1983)CrossRefGoogle Scholar
21 English, A. T. and Kinsborn, E., J. Appl. Phys., 54,169(1972)Google Scholar
22 Horowitz, S. J. and Blech, I. A., Mat. Sci. Eng., 10, 169(1972)Google Scholar
23 Ho, P. S. and Howard, J. K., J. Appl. Phys., 45, 2339(1979)Google Scholar
24 Agarwala, B. N., Digiacomo, G. and Joseph, R. R., Thin Solid Films, 34, 165(1976)CrossRefGoogle Scholar
25 d'Heurle, F. M., Ainslie, N. G. and Gangulee, A., J. Vac. Sci. Technol., 9, 289(1972)CrossRefGoogle Scholar
26 Hu, C-K., Small, M. B. and Ho, P. S., MRS Sympo. Proa., 265,171(1992 Google Scholar
27 Lee, K-L., private communication.Google Scholar
28 Park, C. W. and Vook, R. W., Thin Solid Films, 226, 238(1993)Google Scholar
29 Tao, J., Nathan, W., Cheung, W., Hu, C., Kang, H.-K. and Simon Wong, S., IEEE Electron Device Lett.,13, 433(1992)CrossRefGoogle Scholar
30 Nitta, T., Ohmi, T., Otsuki, M., Takewaki, T. and Shibata, J Electrochem. Soc., 139, 922(1992)Google Scholar