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The Commensurate Phase of Al Overlayers on the Si(111) Surfaces: STM Study of the γ-Phase Surface

Published online by Cambridge University Press:  15 February 2011

M. Yoshimura ,
K. Takaoka  and
T. Yao
M. Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
K. Takaoka
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
T. Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-hiroshima 724, Japan
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Abstract

We have elucidated the atomic structure of the γ-phase, which appears at 1ML coverage of Al on the Si (111) surface, using scanning tunneling Microscopy (STM). The structure is based on the 9×9 dimer-adatom-stacking fault (DAS) structure. Al atoms replace Si atoms in the second layer of the DAS Model. As a result, excess silicon atoms are produced during the formation of the γ-phase and migrate on the surface to form Monatomic-height islands. The area ratio of the upper and lower terraces is in good agreement with the proposed formation Mechanism.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 27
Copyright
Copyright © Materials Research Society 1994

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References

1. Lander, J.J. and Morrison, J., Surf. Sci. 2, 553 (1964).CrossRefGoogle Scholar
2. Nishikata, K., Murakami, K., Yoshimura, M., and Kawazu, A., Surf. Sci. 269/270, 995 (1992).Google Scholar
3. Hamers, R.J., Phys. Rev. B40, 1657 (1989).Google Scholar
4. Yoshimura, M., Takaoka, K., Yao, T., Sueyoshi, T., Sato, T., and Iwatsuki, M., Phys. Rev. B47, 13930 (1993).Google Scholar
5. Kawazu, A. (private communication)Google Scholar
6. Takaoka, K., Yoshimura, M., Yao, T., Sueyoshi, T., Sato, T., and Iwatsuki, M., Phys. Rev. B 48, 5657 (1993).Google Scholar
7. Shibata, A., Kimura, Y., and Takayanagi, K., Surf. Sci. 275, L697 (1992).Google Scholar
8. Shibata, A., Kimura, Y., and Takayanagi, K., Surf. Sci. 273, L430 (1992).CrossRefGoogle Scholar