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Columnar Epitaxy of Hexagonal and Orthorhombic Silicides on Si(111)

Published online by Cambridge University Press:  28 February 2011

R.W. Fathauer ,
C.W. Nieh ,
Q.F. Xiao  and
Shin Hashimoto
R.W. Fathauer
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
C.W. Nieh
Affiliation:
Keck Laboratory of Engineering, California Institute of Technology, Pasadena, CA 91125 (Present address: Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265)
Q.F. Xiao
Affiliation:
Physics Department and Institute for Particle-Solid Interactions, State University of New York at Albany, 1400 Washington Ave., Albany, NY 12222
Shin Hashimoto
Affiliation:
Physics Department and Institute for Particle-Solid Interactions, State University of New York at Albany, 1400 Washington Ave., Albany, NY 12222
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Abstract

Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultra-high vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840°C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)//Si(111), with PtSi[001]//Si<110>.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 583
Copyright
Copyright © Materials Research Society 1990

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References

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