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Coherent TiN Diffusion Barriers for Sub-0.5 μm Planarized AL Technology

Published online by Cambridge University Press:  25 February 2011

Ken Ngan ,
Rod Mosely ,
Zheng Xu  and
Ivo Raaijmakers
Ken Ngan
Affiliation:
Applied Materials, Inc., PVD Division, Santa Clara, CA 95054.
Rod Mosely
Affiliation:
Applied Materials, Inc., PVD Division, Santa Clara, CA 95054.
Zheng Xu
Affiliation:
Applied Materials, Inc., PVD Division, Santa Clara, CA 95054.
Ivo Raaijmakers
Affiliation:
Applied Materials, Inc., PVD Division, Santa Clara, CA 95054.
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Abstract

This paper describes in situ post deposition treatment technologies to fortify the coherent PVD TiN barrier so that it will withstand the high temperature (> 450°C) Al deposition or flow process for sub-0.5 μm planarized Al technology. The coherent PVD TiN barriers were sputtered under 3 different pressure conditions and subsequently heat treated for fortification. Such heat treated, fortified PVD TiN barriers exhibit low reactivity with Al, which is illustrated by the minimal sheet resistance increase in TiN/Al thin film stacks during the heat treatment. Furthermore, optical and SEM inspection on the silicon surface show no pitting.

Leakage current of less than 50 pA has been obtained on 10K-contact chains of sub-0.5 (μm devices using a vacuum integrated coherent Ti/fortified PVD TiN/planarized Al process. This development has led to a completely vacuum integrated sub-0.5 μm PVD Al plug fill process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 249
Copyright
Copyright © Materials Research Society 1994

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References

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