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The Chemistry of Oxygen in Silicon

Published online by Cambridge University Press:  21 February 2011

J. C. Mikkelsen Jr
J. C. Mikkelsen Jr*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Some of the key issues involving the chemistry of oxygen in silicon crystals are presented in this paper. The incorporation of oxygen into Czochralski-grown ingots from melt contact with silica crucibles is described in the context of the Si-SiO2 phase diagram. The techniques for characterizing oxygen in silicon are reviewed, with an emphasis on the use of secondary ion mass spectrometry (SIMS) and 18O isotope substitution. The intrinsic diffusivity and solubility of oxygen in silicon derived from these SIMS measurements are compared to similar results from other techniques as well as related extrinsic behavior of oxygen. Aggregation phenomena involving oxygen, including thermal donor formation and precipitation are discussed. Finally, the recent progress in understanding internal gettering and shear stress are summarized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 205
Copyright
Copyright © Materials Research Society 1985

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References

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