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Chemical Beam Epitaxy of GaP Using Triethylgallium and Tertiarybutylphosphine

Published online by Cambridge University Press:  22 February 2011

James T. Kelliher  and
Klaus J. Bachmann
James T. Kelliher
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695–7919.
Klaus J. Bachmann
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC 27695–7919.
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Abstract

In this paper we report the growth of GaP/Si heterostructures by metalorganic chemical beam epitaxy (MOCBE), including information on a MOCBE system custom built for this work. The gallium source was triethylgallium and the phosphorus source was tertiarybutylphosphine. The range for GaP epitaxy is 260 <T< 375°C. Methods of characterization included scanning electron microscopy (SEM), Auger electron (AES), X-ray photoelectron (XPS) and Rutherford backscattering (RBS) spectroscopies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 51
Copyright
Copyright © Materials Research Society 1993

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References

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