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Charge Transfer Modeling for Charge-Coupled Devices

Published online by Cambridge University Press:  10 February 2011

James P. Lavine ,
Eric G. Stevens ,
Edmund K. Banghart ,
Eugene A. Trabka ,
Bruce C. Burkey  and
David J. Schneider
James P. Lavine
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650–2008
Eric G. Stevens
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650–2008
Edmund K. Banghart
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650–2008
Eugene A. Trabka
Affiliation:
Retired from Eastman Kodak Company
Bruce C. Burkey
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650–2008
David J. Schneider
Affiliation:
Cornell Theory Center, Cornell University, Ithaca, NY 14853–3801
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Abstract

The three-dimensional Poisson's equation is solved by iterative methods and the resulting electric field is used in Newton's equation to simulate electron transfer in a charge-coupled device (CCD). The time dependence of charge transfer is studied through a random walk simulation of Newton's equation. Potential obstacles of the order of 0.03 V are seen to slow charge transfer. Electron motion is also followed in two spatial dimensions through Newton's equation in order to probe a more varied set of potential obstacles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 251
Copyright
Copyright © Materials Research Society 1998

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References

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