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Charge Storage Properties of Nickel Silicide Nanocrystal Layer Embedded in Silicon Dioxide

Published online by Cambridge University Press:  31 January 2011

Yoo-Sung Jang  and
Jong-Hwan Yoon
Yoo-Sung Jang
Affiliation:
semicon02@kangwon.ac.kr, Kangwon National University, Department of Physics, Chuncheon, Gangwon-Do, Korea, Republic of
Jong-Hwan Yoon
Affiliation:
jhyoon@kangwon.ac.kr, Kangwon National University, Department of Physics, Chuncheon, Gangwon-Do, Korea, Republic of
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Abstract

Memory properties of nickel silicide nanocrystal monolayers embedded in silicon dioxide have been investigated. The nanocrystal layers were produced by thermal annealing of a sandwich structure comprised of ultrathin Ni film (0.2 nm) sandwiched between two silicon-rich oxide (SiO1.57) layers. Average diameter and areal density is about 2.9 nm and 1.3×1012 cm-2, respectively. Capacitance-voltage (C-V) measurements are shown to have C-V characteristics suitable for nonvolatile memory applications, including large memory window (∼ 10 V), long retention time ( > 107 s), and excellent endurance ( > 106 program/erase cycles).

Keywords

Ninanostructurememory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H04-04
Copyright
Copyright © Materials Research Society 2009

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