Hostname: page-component-5cf477f64f-qls9x Total loading time: 0 Render date: 2025-04-04T17:09:57.804Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge Storage Properties of Nickel Silicide Nanocrystal Layer Embedded in Silicon Dioxide

Published online by Cambridge University Press:  31 January 2011

Yoo-Sung Jang  and
Jong-Hwan Yoon
Yoo-Sung Jang
Affiliation:
semicon02@kangwon.ac.kr, Kangwon National University, Department of Physics, Chuncheon, Gangwon-Do, Korea, Republic of
Jong-Hwan Yoon
Affiliation:
jhyoon@kangwon.ac.kr, Kangwon National University, Department of Physics, Chuncheon, Gangwon-Do, Korea, Republic of
Get access

Abstract

Memory properties of nickel silicide nanocrystal monolayers embedded in silicon dioxide have been investigated. The nanocrystal layers were produced by thermal annealing of a sandwich structure comprised of ultrathin Ni film (0.2 nm) sandwiched between two silicon-rich oxide (SiO1.57) layers. Average diameter and areal density is about 2.9 nm and 1.3×1012 cm-2, respectively. Capacitance-voltage (C-V) measurements are shown to have C-V characteristics suitable for nonvolatile memory applications, including large memory window (∼ 10 V), long retention time ( > 107 s), and excellent endurance ( > 106 program/erase cycles).

Keywords

Ninanostructurememory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H04-04
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lu, T. Z., Alexe, M., Scholz, R., and Zacharias, M., Appl. Phys. Lett. 87, 202110 (2005).Google Scholar
2 Wang, J., Wu, L., Chen, K., Yu, L., Wang, X., Song, J., and Huang, X., J. Appl. Phys. 101, 014325 (2007).Google Scholar
3 Park, S., Cha, Y. K., Cha, D., Park, Y., Yoo, I. K., Lee, J. H., and Seol, K. S., Appl. Phys. Lett. 89, 033122 (2006).Google Scholar
4 Liu, Z., Lee, C., Narayanan, V., Pei, C., and Kan, E. C., IEEE Trans. Electron Devices 49, 1606 (2002).Google Scholar
5 Liu, Z., Lee, C., Narayanan, V., Pei, C., and Kan, E. C., IEEE Trans. Electron Devices 49, 1614 (2002).Google Scholar
6 Lee, C., Meteer, J., Narayanan, V., and Kan, E., J. Electron Mater 34, 1 (2005).Google Scholar
7 Zhao, D. Zhu, Y., and Liu, J., Solid State Electronics 50, 268 (2006).Google Scholar
8 Jang, Y. S., Yoon, J. H., and Elliman, R. G., Appl. Phys. Lett. 92, 253108 (2008).Google Scholar
9 Hayzlden, C., Batstone, J.L., Cammarata, R.C., Appl. Phys. Lett. 60, 225 (1992).Google Scholar
10 Yoon, J. H. and Elliman, R. G., J. Appl. Phys. 99, 116106 (2006).Google Scholar