Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-04T14:45:47.682Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of X-Ray Imaging Properties of PbI2 Films

Published online by Cambridge University Press:  10 February 2011

K. S. Shah ,
P. Bennett ,
L. Cirignano ,
Y. Dmitriyev ,
M. Klugerman ,
K. Mandal ,
L. P. Moy  and
R. A. Street
K. S. Shah
Affiliation:
RMD, Inc., 44 Hunt Street, Watertown, MA 02172
P. Bennett
Affiliation:
RMD, Inc., 44 Hunt Street, Watertown, MA 02172
L. Cirignano
Affiliation:
RMD, Inc., 44 Hunt Street, Watertown, MA 02172
Y. Dmitriyev
Affiliation:
RMD, Inc., 44 Hunt Street, Watertown, MA 02172
M. Klugerman
Affiliation:
RMD, Inc., 44 Hunt Street, Watertown, MA 02172
K. Mandal
Affiliation:
RMD, Inc., 44 Hunt Street, Watertown, MA 02172
L. P. Moy
Affiliation:
RMD, Inc., 44 Hunt Street, Watertown, MA 02172
R. A. Street
Affiliation:
Xerox PARC, Palo Alto, CA
Get access

Abstract

This paper describes our recent research in developing vacuum sublimed lead iodide films for X-ray imaging. Lead iodide films are promising for this application due to their low dark current, high stopping efficiency, reasonably good charge transport, low cost, and relatively easy scale-up. Lead iodide films (up to 5 × 5 cm2 area) have been grown and characterized by measuring their X-ray imaging properties such as spatial resolution, and contrast transfer function. Excellent spatial resolution (> 10 lp/mm with high CTF ≈50%) has been recorded with PbI2 films. Relevant detection properties such as signal amplitude for given X-ray energy has also been measured and was found to be about 10 times larger as compared to standard phosphor screens used for X-ray imaging. Charge transport and timing characteristics of these films have been measured and the results indicate that these films should be capable of real-time operation. Application of these films for X-ray imaging such as mammography, fluoroscopy, and X-ray diffraction is addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 351
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Eikenberry, E.F. et al., IEEE Trans. Nuc. Sci., NS–38, p. 110, (1991).Google Scholar
2. Stanton, M., Phillips, W., and O'Mara, Daniel, SPIE vol.2278, X-ray and UV Detectors, p. 16, (1994)Google Scholar
3. Street, R.A. et al., High performance amorphous silicon image sensors arrays, presented at ICAMS, Budapest, Hungary (1997).Google Scholar
4. Antonuk, L.E. et al., IEEE Trans. Nuc. Sci., 37(2), p.165, (1990).Google Scholar
5. Lund, J.C. et al., NIM., A283, p.299, (1989).Google Scholar
6. Lee, D. et al., SPIE Vol.3032, p. 88, (1997).Google Scholar
7. Shah, K.S. et al., SPIE Vol.3032, p. 395, (1997).Google Scholar
8. Wu, X.D., Street, R. et al., SPIE Vol. 2172, p. 144, (1994).Google Scholar
9. Schiebel, U. et al., SPIE Vol.2163, 1994.Google Scholar