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Characterization of SiGe Alloy Nanocrystallites Prepared by Pulsed Laser Ablation in Inert Gas Ambient

Published online by Cambridge University Press:  15 February 2011

Yuka Yamada ,
Takaaki Orii  and
Takehito Yoshjda
Yuka Yamada
Affiliation:
Opto-Electro Mechanics Research Laboratory, Matsushita Research Institute Tokyo, Inc., 3–10–1 Higashimita, Tama-ku, Kawasaki 214, Japan, yyamada@mrit.mei.co.jp
Takaaki Orii
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Takehito Yoshjda
Affiliation:
Opto-Electro Mechanics Research Laboratory, Matsushita Research Institute Tokyo, Inc., 3–10–1 Higashimita, Tama-ku, Kawasaki 214, Japan, yyamada@mrit.mei.co.jp
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Abstract

We report nanometer-sized silicon germanium (SiGe) alloy crystallites prepared by excimer laser ablation in constant-pressure inert gas. Size distribution of the SixGelxultrafine particles decreases with decreasing x under fixed conditions of deposition such as ambient gas pressure. Raman scattering spectra of the deposited SiGe ultrafine particles show three peaks intrinsic to crystalline SiGe alloys, and the linewidths of these peaks broaden due to the reduced size of the crystallites. Furthermore, a visible photoluminescence (PL) band with a peak at around 2.2 eV is obtained at room temperature after an annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 123
Copyright
Copyright © Materials Research Society 1997

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