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Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam

Published online by Cambridge University Press:  03 September 2012

Yuzuru Ohji ,
Akira Uedono ,
Long Wei ,
Yasushi Tabuki  and
Shoichiro Tanigawa
Yuzuru Ohji
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubun-ji, Tokyo 185, Japan
Akira Uedono
Affiliation:
Faculty of Engineering, University of Tokyo, Bunkyou-ku, Tokyo 185, Japan
Long Wei
Affiliation:
Institute of Material Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Yasushi Tabuki
Affiliation:
Institute of Material Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Shoichiro Tanigawa
Affiliation:
Institute of Material Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Abstract

MOS device interfaces are investigated using carrier injection and monoenergetic positron beam experiments. Carrier injection reveals that the holes injected into gate S1O2 film seem to be the main cause of the interface state generation and the dielectric breakdown of thin-gate SiO2. Positron annihilation experiments show that the positron diffuse along the electric field in the Si and the gate SiO2 and are trapped in the interface region before annihilation. The obtained value of 5 at the SiO2/Si interface was 0.500 ±0.003. The behavior of holes in the SiO2 and SiO2/Si interface are simulated using the monoenergetic positron annihilation technique.

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References

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