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Characterization of Lead Zirconate Titanate (PZT) - Indium Tin Oxide (ITO) Thin Film Interface

Published online by Cambridge University Press:  16 February 2011

K. Sreenivas ,
M. Sayer ,
T. Laursen ,
J. L. Whitton ,
R. Pascual ,
D. J. Johnson ,
D. T. Amm ,
G. I. Sproule ,
D. F. Mitchell  and
M. J. Graham
...Show all authors
K. Sreenivas
Affiliation:
Queen's University, Dept. of Physics, Kingston, Ontario, K713N6, Canada
M. Sayer
Affiliation:
Queen's University, Dept. of Physics, Kingston, Ontario, K713N6, Canada
T. Laursen
Affiliation:
Queen's University, Dept. of Physics, Kingston, Ontario, K713N6, Canada
J. L. Whitton
Affiliation:
Queen's University, Dept. of Physics, Kingston, Ontario, K713N6, Canada
R. Pascual
Affiliation:
Queen's University, Dept. of Physics, Kingston, Ontario, K713N6, Canada
D. J. Johnson
Affiliation:
Queen's University, Dept. of Physics, Kingston, Ontario, K713N6, Canada
D. T. Amm
Affiliation:
Queen's University, Dept. of Physics, Kingston, Ontario, K713N6, Canada
G. I. Sproule
Affiliation:
National Research Council of Canada, Chemistry division, Ottawa, K1A OR6
D. F. Mitchell
Affiliation:
National Research Council of Canada, Chemistry division, Ottawa, K1A OR6
M. J. Graham
Affiliation:
National Research Council of Canada, Chemistry division, Ottawa, K1A OR6
S. C. Gujrathi
Affiliation:
University of Montreal, C.P. 6128 Succursale a' Montreal, Quebec,H3C 3JC
K. Oxorn
Affiliation:
University of Montreal, C.P. 6128 Succursale a' Montreal, Quebec,H3C 3JC
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Abstract

The interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle X-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITO layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 255
Copyright
Copyright © Materials Research Society 1990

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References

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