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Characterization of GaN Films on Sapphire by Cathodoluminescence

Published online by Cambridge University Press:  10 February 2011

L.-L. Chao ,
G. S. Cargill III  and
C. Kothandaraman
L.-L. Chao
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
G. S. Cargill III
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
C. Kothandaraman
Affiliation:
Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, NY 10027
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Abstract

Cathodoluminescence (CL) spectroscopy and microscopy were used to study the luminescent properties of a variety of GaN films, both Si-doped and unintentionally-doped, grown on sapphire substrates. A narrow and intense near band-edge emission was found in the CL spectrum of each film examined, and deep-level emission was also observed for some of the films. The luminescence efficiency of near band-edge emission increased with a faster rate than that of deep-level emission when the pumping current was increased. Spatial nonuniformities of luminescence were observed in monochromatic CL microscopy, and microstructures were observed in scanning electron microscopy. No correlations between luminescence features and microstructural features were seen. Degradation of near band-edge luminescence was observed, accompanied by growth of deep-level emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 719
Copyright
Copyright © Materials Research Society 1997

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References

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