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Characterization and Annealing of Sputtered AlN Films for Piezoelectric Resonators

Published online by Cambridge University Press:  21 February 2011

Mark R. Schade ,
Thomas Anderson ,
Paul W. Deal ,
Keenan Evans ,
Roland Fischer ,
Naresh Saha ,
Wayne A. Cronin ,
Nigel Cave ,
Hang M. Liaw  and
Jong K. Lin
...Show all authors
Mark R. Schade
Affiliation:
SPS Communications, Power and Signal Technologies Group, Motorola Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
Thomas Anderson
Affiliation:
SPS Communications, Power and Signal Technologies Group, Motorola Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
Paul W. Deal
Affiliation:
SPS Communications, Power and Signal Technologies Group, Motorola Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
Keenan Evans
Affiliation:
SPS Communications, Power and Signal Technologies Group, Motorola Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
Roland Fischer
Affiliation:
SPS Communications, Power and Signal Technologies Group, Motorola Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
Naresh Saha
Affiliation:
SPS Communications, Power and Signal Technologies Group, Motorola Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
Wayne A. Cronin
Affiliation:
Compound Semiconductor Group, Motorola Inc., 2100 East Elliot Road, Tempe, Arizona 85284
Nigel Cave
Affiliation:
SPS Materais Characterization Laboratory, Motorola Inc., 2200 West Broadway Road, Mesa, Arizona 85201
Hang M. Liaw
Affiliation:
SPS Materais Characterization Laboratory, Motorola Inc., 2200 West Broadway Road, Mesa, Arizona 85201
Jong K. Lin
Affiliation:
SPS Materais Characterization Laboratory, Motorola Inc., 2200 West Broadway Road, Mesa, Arizona 85201
Harland G. Tompkins
Affiliation:
SPS Materais Characterization Laboratory, Motorola Inc., 2200 West Broadway Road, Mesa, Arizona 85201
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Abstract

Sputtered A1N films developed for piezoelectric resonators are extremely chemically reactive. As-sputtered films react with boiling water resulting in a complete loss of the AIN bond structure. Experiments to determine the effect on chemical stability of annealing the sputtered films at 1000 °C, indicate annealing in an oxidizing gas leads to partial oxidation of AlN. Annealing in an inert gas prevents oxidation but does not protect the films from attack by boiling water. Annealing in a reducing gas followed by annealing in an inert gas renders A1N films stable in boiling water. A1N film structure and composition have been studied via Refractive Index, XRD, SIMS, SEM, AES, XPS and FTIR evaluations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 447
Copyright
Copyright © Materials Research Society 1995

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