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Characteristics of Oxygen Precipitation in Silicon Wafers Preannealed at 723K

Published online by Cambridge University Press:  03 September 2012

I. Fusegawa ,
E. Iino ,
T. Hirohata  and
H. Yamagishi
I. Fusegawa
Affiliation:
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1 Annaka, Gunma, 379–01, Japan
E. Iino
Affiliation:
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1 Annaka, Gunma, 379–01, Japan
T. Hirohata
Affiliation:
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1 Annaka, Gunma, 379–01, Japan
H. Yamagishi
Affiliation:
Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2–13–1 Annaka, Gunma, 379–01, Japan
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Abstract

We investigated phenomena of oxygen precipitation in silicon single crystals by two kinds of thermal treatment, supposing a CMOS fabrication process. The one consisted of the first annealing at 1123K for 4 hrs and the second annealing at 1423K for 16 hrs. The other one consisted of the annealing at 1273K for 4 hrs and the second annealing at 1423K for 13 hrs. In the results, a single-step preannealing at 723K for 2 hrs was effective for the oxygen precipitation by the former process and nonuniform distribution profiles along crystal growth axis were well improved, however, insufficiently improved against the latter process. We considered a two-step preannealing process consisting of the first annealing at 723K for 2 hrs and the second annealing at 923K for 2 hrs. This new process was effective for the oxygen precipitation by the latter process. Especially, we could obtain uniform distribution profiles of oxygen precipitation along a crystal growth axis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 683
Copyright
Copyright © Materials Research Society 1992

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References

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