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Characteristics of Metal/PZT/p—Si MIS Capacitors

Published online by Cambridge University Press:  16 February 2011

T.S. Kalkur ,
George Argos  and
Lee Kammerdiner
T.S. Kalkur
Affiliation:
Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado Springs, CO 80933
George Argos
Affiliation:
Ramtron Corporation, Colorado Springs, CO 80933.
Lee Kammerdiner
Affiliation:
Ramtron Corporation, Colorado Springs, CO 80933.
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Abstract

Lead Zirconate Titanate (PZT) thin films have been sputter deposited on p–Si. The patterned PZT films were annealed in a furnace as well as in a rapid thermal annealer. The high frequency characterization of metal–PZT– p– Si capacitors show good Capacitance–Voltage characteristics. The effective dielectric constant of PZT on Si was found to be very low and depends on the thickness of the PZT film and the annealing conditions. The high frequency C–V shows hysteresis which is due to the injection of charges across the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 313
Copyright
Copyright © Materials Research Society 1990

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References

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